DPAD50 TO-72 4L ROHS

J/SST201/2/4 High Gain, Single N-Channel JFET Amplifier General Purpose, Low Noise, Low Cost, Single JFET SOT-23 TOP VIEW Absolute Maximum Ratings @ 25 °C (unless otherwise stated) D 1 S 2 3 Maximum Temperatures 1 Storage Temperature -65 to +150°C Junction Operating Temperature -55 to +150°C D S 3 G TO-92 (3L) Top View Maximum Power Dissipation Continuous Power Dissipation @ +25°C 2 G SOT-23 (3L) Top View 350mW Maximum Currents IG(F) = 10mA Gate Forward Current Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V Features Benefits Applications • • • • • • • • • • • • High-Gain, Low Noise Amplifiers • Low-Current, Low-Voltage Battery-Powered Amplifiers • Infrared Detector Amplifiers • Ultra-High Input Impedance PreAmplifiers Low Cutoff Voltage: J201